Stress-controlled zero-field spin splitting in silicon carbide

We report the influence of static mechanical deformation on zero-field spin splitting silicon vacancies in carbide at room temperature. use AlN/6H-SiC heterostructures deformed by growth conditions and monitor stress distribution as a function distance from heterointerface with spatially resolved confocal Raman spectroscopy. The V1/V3 V2 centers 6H-SiC, measured optically detected magnetic resonance, reveals significant changes compared to bulk value. This approach allows unambiguous determination spin-deformation interaction constant, which is 0.75 GHz/strain for 0.5 centers. Provided piezoelectricity AlN, our results offer strategy realize fine tuning transition energies SiC deformation.